p p j u 6n a 40 / pj d 6na40 / pj p 6n a 40 / pj f 6n a 40 march 10,2014 - rev.00 page 1 4 00 v n - c hannel mosfet v oltage 4 0 0 v c urrent 6 a ito - 220ab - f to - 220ab to - 252aa to - 251aa f eatures ? r ds(on) , v gs @10v,i d @ 3 a< 0.95 ? high switching speed ? im proved dv/dt capability ? low gate charge ? low reverse transfer capacitance ? lead free in compliance with eu rohs 2011/65/eu directive. ? green molding compound as per iec61249 std. (halogen free) mechanical data ? case: to - 251aa , to - 252aa ,to - 220ab, ito - 220ab - f package ? terminals : solderable per mil - std - 750, method 2026 ? to - 251aa approx. weight : 0.0104 ounces, 0.297 grams ? to - 252aa approx. weight : 0.0104 ounces, 0.297 grams ? to - 220ab approx. weight : 0.06 7 ounces, 1. 9 grams ? ito - 220ab - f approx. weight : 0.068 ounces , 2 grams maximum ratings and thermal characteristics (t a =25 o c unless otherwise noted) parameter symbol to - 251aa to - 220ab ito - 220ab - f to - 252aa units drain - source voltage v ds 400 v gate - source voltage v gs + 30 v continuous drain current i d 6 a pulsed drain current i dm 24 a single pulse avalanche energy (note 1 ) e as 2 66 mj power dissipation t c =25 o c p d 77 100 33 77 w derate above 25 o c 0.62 0.8 0.26 0.62 w/ o c operating junction and storage temperature range t j ,t stg - 55~150 o c typical the rmal resistance - junction to case - j unction to ambient r jc ja 1.6 110 1.25 62.5 3.8 120 1.6 110 o c /w ? limited only by maximum junction temperature
p p j u 6n a 40 / pj d 6na40 / pj p 6n a 40 / pj f 6n a 40 march 10,2014 - rev.00 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symbol test condition min. typ. max. units static drain - source breakdown voltage bv dss v gs =0v,i d =250ua 4 00 - - v gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 2 2.67 4 v drain - source on - state resistance r ds(on) v gs =10v,i d = 3 a - 0. 8 0.95 dss v ds = 4 00v,v gs =0v - 0.01 1 .0 ua gate - source leakage current i gss v gs = + 30 v,v ds =0v - + 10 + 100 na diode forward voltage v sd i s = 6 a,v gs =0v - 0.92 1.4 v dynamic (note 4 ) total gate charge q g v ds = 320 v, i d = 6 a, v gs = 10 v (note 2 , 3 ) - 11 .4 - nc gate - source cha rge q gs - 4.2 - gate - drain charge q gd - 3.5 - input capacitance ciss v ds =25v, v gs =0v, f=1.0mhz - 553 - pf output capacitance coss - 78 - reverse transfer capacitance crss - 1.4 - turn - on delay time td (on) v dd =2 2 0v, i d = 6 a, r g = 12 (note 2 , 3 ) - 1 1 - ns turn - on rise time t r - 2 6 - turn - off delay time td (off) - 2 2 - turn - off fall time t f - 2 5 - drain - source diode maximum continuous drain - source diode forward current i s --- - - 6 a maximum pulsed drain - source diode forwa rd current i sm --- - - 24 a reverse recovery time trr v gs =0v, i s = 6 a di f / dt=100a/us (note 2 ) - 25 5 330 ns reverse recovery charge qrr - 1.5 2 uc notes : 1. l= 30 mh, i as = 4 a, v dd =50v, r g =25ohm, starting t j =25 o c 2. pulse width < 300us, duty cycle < 2% 3. essentially i ndependent of operating temperature typical characteristics . 4. guaranteed by design, not subject to product ion testing
p p j u 6n a 40 / pj d 6na40 / pj p 6n a 40 / pj f 6n a 40 march 10,2014 - rev.00 page 3 t ypical characteristic curves fig.1 output characteristics fig. 2 transfer characteristics fig. 3 on - resistance vs. dra in current fig. 4 on - resistsnce vs. junction temperature fig. 5 capacitance vs. drain - source voltage fig. 6 body dlode characterlslcs
p p j u 6n a 40 / pj d 6na40 / pj p 6n a 40 / pj f 6n a 40 march 10,2014 - rev.00 page 4 t ypical characteristic curves fig. 7 gate - charge characteristics fig. 8 breakdown voltage varia tion vs.temperature fig. 9 threshold voltage variation with temperature fig. 10 maximum safe operating area fig. 11 maximum safe operating area fig. 1 2 maximum safe operating area
p p j u 6n a 40 / pj d 6na40 / pj p 6n a 40 / pj f 6n a 40 march 10,2014 - rev.00 page 5 t ypical characteristic curves fig. 13 pju/pjd nor malized transient thermal impedance vs. pulse width fig. 14 PJP6NA40 normalized transient thermal impedance vs. pulse width fig. 15 pjf6na40 normalized transient thermal impedance vs. pulse width
p p j u 6n a 40 / pj d 6na40 / pj p 6n a 40 / pj f 6n a 40 march 10,2014 - rev.00 page 6 packaging information . ito - 220ab - f dimension u nit: mm t o - 220ab dimension u nit: mm to - 252aa dimension u nit: mm to - 251aa dimension u nit: mm
p p j u 6n a 40 / pj d 6na40 / pj p 6n a 40 / pj f 6n a 40 march 10,2014 - rev.00 page 7 p art n o packing code v ersion part n o packing code package type packing type marking ver sion pju 6n a 40_ t0_00001 to - 251aa 80pcs / tube u 6n a 40 halogen free pjd 6n a 40 _l2_00001 to - 252aa 3,000pcs / 13
p p j u 6n a 40 / pj d 6na40 / pj p 6n a 40 / pj f 6n a 40 march 10,2014 - rev.00 page 8 disclai mer
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